2SB1026DMTL-E
vs
2SB1025DJTR
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
HITACHI LTD
|
| Part Package Code |
UPAK
|
|
| Package Description |
SMALL OUTLINE, R-PSSO-F3
|
UPAK-3
|
| Pin Count |
4
|
3
|
| Manufacturer Package Code |
PLZZ0004CA
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
1997-08-01
|
|
| Samacsys Manufacturer |
Renesas Electronics
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
100 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
100
|
| JESD-30 Code |
R-PSSO-F3
|
R-PSSO-F3
|
| JESD-609 Code |
e6
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN BISMUTH
|
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
20
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
140 MHz
|
140 MHz
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare 2SB1026DMTL-E with alternatives
Compare 2SB1025DJTR with alternatives