2SB1026DLTL
vs
2SB1026DL
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
RENESAS ELECTRONICS CORP
HITACHI LTD
Package Description
SMALL OUTLINE, R-PSSO-F3
SMALL OUTLINE, R-PSSO-F3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
1 A
1 A
Collector-Emitter Voltage-Max
100 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
60
60
JESD-30 Code
R-PSSO-F3
R-PSSO-F3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
SINGLE
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
140 MHz
Base Number Matches
2
2
Power Dissipation-Max (Abs)
1 W
Compare 2SB1026DLTL with alternatives
Compare 2SB1026DL with alternatives