2SB1025DK
vs
2SB1026DMTR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
HITACHI LTD
RENESAS ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PSSO-F3
UPAK-3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
1 A
1 A
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
160
100
JESD-30 Code
R-PSSO-F3
R-PSSO-F3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
SINGLE
SINGLE
Base Number Matches
6
2
Pbfree Code
No
Rohs Code
No
Case Connection
COLLECTOR
Collector-Emitter Voltage-Max
100 V
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
140 MHz
Compare 2SB1025DK with alternatives
Compare 2SB1026DMTR with alternatives