2SB1025DJTR-E vs 2SB1025DJTL-E feature comparison

2SB1025DJTR-E Renesas Electronics Corporation

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2SB1025DJTL-E Renesas Electronics Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS ELECTRONICS CORP
Part Package Code UPAK UPAK
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Pin Count 4 4
Manufacturer Package Code PLZZ0004CA PLZZ0004CA
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 1997-08-01 1997-08-01
Samacsys Manufacturer Renesas Electronics Renesas Electronics
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 30
JESD-30 Code R-PSSO-F3 R-PSSO-F3
JESD-609 Code e6 e6
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN BISMUTH TIN BISMUTH
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 140 MHz 140 MHz
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 1 W
Time@Peak Reflow Temperature-Max (s) 20

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