We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

2SB1002CHTR vs 2SB1026DM feature comparison

2SB1002CHTR Hitachi Ltd

Buy Now Datasheet

2SB1026DM Renesas Electronics Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HITACHI LTD RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-F3 UPAK-3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 50 V 100 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 100
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 140 MHz
Base Number Matches 2 2
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 1 W
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare 2SB1002CHTR with alternatives

Compare 2SB1026DM with alternatives