2SA1832GRTE85R
vs
2SA1162-GR(5RMIB,F
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.15 A
|
0.15 A
|
| Collector-Base Capacitance-Max |
7 pF
|
7 pF
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
200
|
200
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
80 MHz
|
80 MHz
|
| VCEsat-Max |
0.3 V
|
0.3 V
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
LOW NOISE
|
| JEDEC-95 Code |
|
TO-236
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
0.15 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 2SA1832GRTE85R with alternatives
Compare 2SA1162-GR(5RMIB,F with alternatives
-
2SA1162-GR(5RMIB,F vs 2SA1832-GR-TP
-
2SA1162-GR(5RMIB,F vs 2SA1015-GR-AP
-
2SA1162-GR(5RMIB,F vs 2SA1980-G-AP
-
2SA1162-GR(5RMIB,F vs 2SA1162-GR(T5LTRSF
-
2SA1162-GR(5RMIB,F vs 2SA1586-GR(5LSAW,F
-
2SA1162-GR(5RMIB,F vs KTA2014-GR
-
2SA1162-GR(5RMIB,F vs 2SA1980-G-BP
-
2SA1162-GR(5RMIB,F vs 2SA1162-GR(T5LPP,F
-
2SA1162-GR(5RMIB,F vs 2SA1162-GR(T5LSTAF