2SA1302-R
vs
2SA1302R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
TOSHIBA AMERICA ELECTRONIC COMPONENTS INC
MOSPEC SEMICONDUCTOR CORP
Reach Compliance Code
unknown
unknown
Case Connection
COLLECTOR
Collector Current-Max (IC)
15 A
15 A
Collector-Emitter Voltage-Max
200 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
55
55
JESD-30 Code
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
150 W
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
NOT SPECIFIED
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
25 MHz
10 MHz
VCEsat-Max
3 V
Base Number Matches
1
3
Package Description
,
ECCN Code
EAR99
Power Dissipation-Max (Abs)
150 W
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