2SA1162-GR(F) vs 933988950412 feature comparison

2SA1162-GR(F) Toshiba America Electronic Components

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933988950412 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Toshiba
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.15 A 0.15 A
Collector-Base Capacitance-Max 7 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 200
JEDEC-95 Code TO-236 TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.15 W
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 80 MHz 80 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Part Package Code TO-92
Pin Count 3
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish TIN

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