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2SA1162-GR(5RMIB,F vs 2SA1586-GR(T5LHITF feature comparison

2SA1162-GR(5RMIB,F Toshiba America Electronic Components

Buy Now Datasheet

2SA1586-GR(T5LHITF Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.15 A 0.15 A
Collector-Base Capacitance-Max 7 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 200
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.15 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 80 MHz 80 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Reference Standard AEC-Q101
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare 2SA1162-GR(5RMIB,F with alternatives

Compare 2SA1586-GR(T5LHITF with alternatives