2SA1041 vs BU4507DF feature comparison

2SA1041 FUJITSU Limited

Buy Now Datasheet

BU4507DF NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Additional Feature RING EMITTER TRANSISTOR BUILT-IN BIAS RESISTOR
Case Connection COLLECTOR ISOLATED
Collector Current-Max (IC) 15 A 8 A
Collector-Emitter Voltage-Max 120 V 800 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 7 4.2
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 175 °C 150 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 100 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form PIN/PEG THROUGH-HOLE
Terminal Position BOTTOM SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 60 MHz
Turn-off Time-Max (toff) 1800 ns
VCEsat-Max 1.5 V
Base Number Matches 1 1
Rohs Code No
Power Dissipation-Max (Abs) 45 W

Compare 2SA1041 with alternatives

Compare BU4507DF with alternatives