2N929
vs
2SB647-B
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
HITACHI LTD
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
LOW NOISE
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.03 A
|
|
| Collector-Emitter Voltage-Max |
45 V
|
|
| Configuration |
SINGLE
|
|
| DC Current Gain-Min (hFE) |
60
|
|
| JEDEC-95 Code |
TO-18
|
|
| JESD-30 Code |
O-MBCY-W3
|
O-PBCY-W3
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
|
| Power Dissipation-Max (Abs) |
1.8 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
30 MHz
|
|
| Base Number Matches |
2
|
3
|
|
|
|
Compare 2N929 with alternatives
Compare 2SB647-B with alternatives