2N7270U
vs
IRHN8450
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, R-MSFM-P3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Additional Feature
RADIATION HARDENED
RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
500 mJ
Case Connection
ISOLATED
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
11 A
11 A
Drain-source On Resistance-Max
0.5 Ω
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
JESD-30 Code
R-MSFM-P3
R-CBCC-N3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
150 W
100 W
Pulsed Drain Current-Max (IDM)
44 A
44 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
PIN/PEG
NO LEAD
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
320 ns
320 ns
Turn-on Time-Max (ton)
235 ns
235 ns
Base Number Matches
2
2
Pin Count
3
Power Dissipation-Max (Abs)
100 W
Compare 2N7270U with alternatives
Compare IRHN8450 with alternatives