2N7270
vs
JANKCAH2N7270
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
RADIATION HARDENED
|
Avalanche Energy Rating (Eas) |
500 mJ
|
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
500 V
|
|
Drain Current-Max (ID) |
11 A
|
11 A
|
Drain-source On Resistance-Max |
0.45 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-254AA
|
|
JESD-30 Code |
S-MSFM-P3
|
R-XUUC-N3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
UNSPECIFIED
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
UNCASED CHIP
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
Power Dissipation-Max (Abs) |
150 W
|
150 W
|
Pulsed Drain Current-Max (IDM) |
44 A
|
|
Qualification Status |
Not Qualified
|
Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
PIN/PEG
|
NO LEAD
|
Terminal Position |
SINGLE
|
UPPER
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
14
|
1
|
Package Description |
|
DIE-3
|
Moisture Sensitivity Level |
|
1
|
Reference Standard |
|
MIL-19500/657A
|
|
|
|
Compare 2N7270 with alternatives
Compare JANKCAH2N7270 with alternatives