2N7002TR13
vs
2N7002TBT/R7
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
PAN JIT INTERNATIONAL INC
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
0.115 A
0.115 A
Drain-source On Resistance-Max
7.5 Ω
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
5 pF
JESD-30 Code
R-PDSO-G3
R-PDSO-F3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.35 W
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count
3
Additional Feature
ULTRA LOW RESISTANCE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare 2N7002TR13 with alternatives
Compare 2N7002TBT/R7 with alternatives