2N7002FN3_R1_00001
vs
2N7002K-AU_R2_000A1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
PAN JIT INTERNATIONAL INC
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
Base Number Matches |
1
|
1
|
Samacsys Manufacturer |
|
PANJIT
|
Additional Feature |
|
ULTRA LOW RESISTANCE
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
60 V
|
Drain Current-Max (ID) |
|
0.3 A
|
Drain-source On Resistance-Max |
|
3 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
|
5 pF
|
JESD-30 Code |
|
R-PDSO-G3
|
JESD-609 Code |
|
e3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Polarity/Channel Type |
|
N-CHANNEL
|
Reference Standard |
|
AEC-Q101; TS 16949
|
Surface Mount |
|
YES
|
Terminal Finish |
|
MATTE TIN
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N7002FN3_R1_00001 with alternatives
Compare 2N7002K-AU_R2_000A1 with alternatives