2N7002EQ-7-F
vs
2N7002E-T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIODES INC
VISHAY SILICONIX
Reach Compliance Code
compliant
compliant
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Diodes Incorporated
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
0.292 A
0.24 A
Drain-source On Resistance-Max
3 Ω
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
2.8 pF
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.7 W
Reference Standard
AEC-Q101; IATF 16949; MIL-STD-202
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
SOT-23
Package Description
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
ECCN Code
EAR99
JEDEC-95 Code
TO-236
Qualification Status
Not Qualified
Compare 2N7002EQ-7-F with alternatives
Compare 2N7002E-T1 with alternatives