2N7002 vs 2N7002W feature comparison

2N7002 Galaxy Microelectronics

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2N7002W Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Part Package Code SOT-23
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.115 A
Drain-source On Resistance-Max 7.5 Ω 7.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 5 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 18 1
Package Description SMALL OUTLINE, R-PDSO-G3
Samacsys Manufacturer Galaxy