2N7000RLRAG
vs
2N7000-18
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
MOTOROLA INC
|
Part Package Code |
TO-92 (TO-226) 5.33mm Body Height
|
|
Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-T3
|
Pin Count |
3
|
|
Manufacturer Package Code |
29-11
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.2 A
|
0.2 A
|
Drain-source On Resistance-Max |
5 Ω
|
6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
JEDEC-95 Code |
TO-92
|
|
JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
JESD-609 Code |
e1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.35 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
HTS Code |
|
8541.21.00.95
|
Power Dissipation Ambient-Max |
|
0.35 W
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N7000RLRAG with alternatives
Compare 2N7000-18 with alternatives