2N7000-D26Z
vs
2N7000RLRA
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ONSEMI
MOTOROLA INC
Part Package Code
TO-92-3 LF
Manufacturer Package Code
135AR
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
onsemi
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
0.2 A
0.2 A
Drain-source On Resistance-Max
5 Ω
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
5 pF
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
5
Package Description
CYLINDRICAL, O-PBCY-T3
HTS Code
8541.21.00.95
Power Dissipation Ambient-Max
0.35 W
Compare 2N7000-D26Z with alternatives
Compare 2N7000RLRA with alternatives