2N7000 vs FDN361BN feature comparison

2N7000 InterFET Corporation

Buy Now Datasheet

FDN361BN Fairchild Semiconductor Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTER F E T CORP FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 30 V
Drain Current-Max (ID) 0.2 A 1.4 A
Drain-source On Resistance-Max 5 Ω 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 23 pF
JEDEC-95 Code TO-226AA
JESD-30 Code O-PBCY-T3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 40 3
Pbfree Code Yes
Part Package Code SSOT
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code MOLDED PACKAGE, SUPERSOT, 3 LEAD
HTS Code 8541.21.00.95
Additional Feature FAST SWITCHING
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare 2N7000 with alternatives

Compare FDN361BN with alternatives