2N6849-JQR-AR1
vs
JANS2N6849
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
SEMELAB LTD
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
BCY
|
BCY
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
2
|
2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE ENERGY RATED
|
|
Avalanche Energy Rating (Eas) |
500 mJ
|
92 mJ
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.345 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
JESD-609 Code |
e1
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
25 A
|
25 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN SILVER COPPER
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
HTS Code |
|
8541.29.00.95
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
25 W
|
Power Dissipation-Max (Abs) |
|
25 W
|
Reference Standard |
|
MIL-19500/564
|
|
|
|
Compare 2N6849-JQR-AR1 with alternatives
Compare JANS2N6849 with alternatives