2N6845-QR-B
vs
IRFF9222
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
HARRIS SEMICONDUCTOR
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
200 V
Drain Current-Max (ID)
4 A
2 A
Drain-source On Resistance-Max
0.69 Ω
2.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
16 A
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
5
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
290 mJ
Case Connection
DRAIN
JESD-609 Code
e0
Power Dissipation Ambient-Max
20 W
Power Dissipation-Max (Abs)
20 W
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
195 ns
Turn-on Time-Max (ton)
90 ns
Compare 2N6845-QR-B with alternatives
Compare IRFF9222 with alternatives