2N6796TX
vs
2N6796
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
HARRIS SEMICONDUCTOR
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
RADIATION HARDENED
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
32 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
17
HTS Code
8541.29.00.95
Feedback Cap-Max (Crss)
150 pF
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
105 ns
Compare 2N6796TX with alternatives