2N6796PBF vs 2N6796 feature comparison

2N6796PBF International Rectifier

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2N6796 Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code BCY
Package Description CYLINDRICAL, O-MBCY-W3
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature HIGH RELIABILITY RADIATION HARDENED
Avalanche Energy Rating (Eas) 4.3 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 8 A 8 A
Drain-source On Resistance-Max 0.195 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 25 W 25 W
Pulsed Drain Current-Max (IDM) 32 A 32 A
Qualification Status Not Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 85 ns 85 ns
Turn-on Time-Max (ton) 105 ns 105 ns
Base Number Matches 1 17
Feedback Cap-Max (Crss) 150 pF
JESD-609 Code e0
Power Dissipation-Max (Abs) 25 W
Terminal Finish Tin/Lead (Sn/Pb)

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