2N6788-QR-B
vs
JANTXV2N6788
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
SEMELAB LTD
SEMICOA CORP
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
HERMETIC SEALED, TO-39, 3 PIN
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
6 A
6 A
Drain-source On Resistance-Max
0.345 Ω
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
24 A
24 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
6
Avalanche Energy Rating (Eas)
0.242 mJ
Reference Standard
MIL-19500
Compare 2N6788-QR-B with alternatives
Compare JANTXV2N6788 with alternatives