2N6788
vs
JANTXV2N6788
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
AVALANCHE RATED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
6 A
6 A
Drain-source On Resistance-Max
0.3 Ω
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
100 pF
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
20 W
Power Dissipation-Max (Abs)
20 W
20 W
Pulsed Drain Current-Max (IDM)
24 A
24 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
110 ns
Turn-on Time-Max (ton)
110 ns
Base Number Matches
6
2
Package Description
HERMETIC SEALED, MODIFIED TO-39, 3 PIN
Avalanche Energy Rating (Eas)
0.242 mJ
Reference Standard
MIL-19500/555
Compare 2N6788 with alternatives
Compare JANTXV2N6788 with alternatives