2N6770R1
vs
2N6770
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, O-MBFM-P2
HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
12 A
12 A
Drain-source On Resistance-Max
6 Ω
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e1
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
8 mJ
Case Connection
DRAIN
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
48 A
Reference Standard
MILITARY STANDARD (USA)
Transistor Application
SWITCHING
Compare 2N6770R1 with alternatives
Compare 2N6770 with alternatives