2N6766-JQR-AR1
vs
2N6766
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
FLANGE MOUNT, O-MBFM-P2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
30 A
|
30 A
|
| Drain-source On Resistance-Max |
0.085 Ω
|
0.085 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-3
|
TO-204AE
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e1
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN SILVER COPPER
|
TIN LEAD
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
20
|
| Additional Feature |
|
RADIATION HARDENED
|
| Case Connection |
|
DRAIN
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Pulsed Drain Current-Max (IDM) |
|
60 A
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N6766-JQR-AR1 with alternatives
Compare 2N6766 with alternatives