2N6760TX
vs
2N6760TXV
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
ROCHESTER ELECTRONICS LLC
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Additional Feature
RADIATION HARDENED
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
1 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
8 A
Qualification Status
Not Qualified
COMMERCIAL
Reference Standard
MILITARY STANDARD (USA)
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare 2N6760TX with alternatives
Compare 2N6760TXV with alternatives