2N6760TX
vs
2N6760R1
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
TT ELECTRONICS PLC
|
Package Description |
FLANGE MOUNT, O-MBFM-P2
|
FLANGE MOUNT, O-MBFM-P2
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
400 V
|
400 V
|
Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
Drain-source On Resistance-Max |
1 Ω
|
1.22 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-204AA
|
TO-204AA
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
JESD-609 Code |
e0
|
e1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
8 A
|
22 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
Yes
|
Avalanche Energy Rating (Eas) |
|
1.7 mJ
|
|
|
|
Compare 2N6760TX with alternatives
Compare 2N6760R1 with alternatives