2N6759R1
vs
IRF333R
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SEMELAB LTD
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, O-MBFM-P2
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2015-12-17
EFUP
50
Conflict Mineral Status
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
350 V
Drain Current-Max (ID)
4.5 A
4.5 A
Drain-source On Resistance-Max
1.5 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e1
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
18 A
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
80 ns
Turn-on Time-Max (ton)
46 ns
Compare 2N6759R1 with alternatives
Compare IRF333R with alternatives