2N6759
vs
MTM5N35
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
MOTOROLA INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
350 V
350 V
Drain Current-Max (ID)
4.5 A
5 A
Drain-source On Resistance-Max
1.5 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
FLANGE MOUNT, O-MBFM-P2
HTS Code
8541.29.00.95
Case Connection
DRAIN
Feedback Cap-Max (Crss)
80 pF
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
12 A
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
150 ns
Compare 2N6759 with alternatives
Compare MTM5N35 with alternatives