2N6671E3
vs
2N6648
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
NEW ENGLAND SEMICONDUCTOR
|
Package Description |
METAL CAN-2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
8 A
|
10 A
|
Collector-Emitter Voltage-Max |
300 V
|
40 V
|
DC Current Gain-Min (hFE) |
10
|
1000
|
JEDEC-95 Code |
TO-3
|
TO-66
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
Number of Terminals |
2
|
2
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
NPN
|
PNP
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
18
|
Rohs Code |
|
No
|
Configuration |
|
DARLINGTON
|
JESD-609 Code |
|
e0
|
Number of Elements |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
27 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Transition Frequency-Nom (fT) |
|
20 MHz
|
VCEsat-Max |
|
2 V
|
|
|
|
Compare 2N6671E3 with alternatives