2N6661-JQR-BR1
vs
2N6661
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
SILICONIX INC
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
90 V
|
|
| Drain Current-Max (ID) |
0.9 A
|
2 A
|
| Drain-source On Resistance-Max |
4 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
10 pF
|
|
| JEDEC-95 Code |
TO-205AD
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| JESD-609 Code |
e1
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN SILVER COPPER
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
6
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
BCY
|
| Pin Count |
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Power Dissipation-Max (Abs) |
|
6.25 W
|
|
|
|
Compare 2N6661-JQR-BR1 with alternatives
Compare 2N6661 with alternatives