2N6661-E3
vs
2N6661
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
SILICONIX INC
|
Package Description |
LEAD FREE, TO-39 TOLL LID, 3 PIN
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Additional Feature |
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
90 V
|
|
Drain Current-Max (ID) |
0.86 A
|
2 A
|
Drain-source On Resistance-Max |
4 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
|
JEDEC-95 Code |
TO-205AD
|
|
JESD-30 Code |
O-MBCY-W3
|
|
JESD-609 Code |
e4
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
METAL
|
|
Package Shape |
ROUND
|
|
Package Style |
CYLINDRICAL
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
6.25 W
|
6.25 W
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
SILVER
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
WIRE
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
6
|
Pbfree Code |
|
No
|
Part Package Code |
|
BCY
|
Pin Count |
|
2
|
|
|
|
Compare 2N6661-E3 with alternatives
Compare 2N6661 with alternatives