2N6661
vs
2N6661-E3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SILICONIX INC
VISHAY INTERTECHNOLOGY INC
Part Package Code
BCY
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
2 A
0.86 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e4
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
6.25 W
6.25 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
SILVER
Base Number Matches
6
1
Package Description
LEAD FREE, TO-39 TOLL LID, 3 PIN
Samacsys Manufacturer
Vishay
Additional Feature
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
DS Breakdown Voltage-Min
90 V
Drain-source On Resistance-Max
4 Ω
Feedback Cap-Max (Crss)
10 pF
JEDEC-95 Code
TO-205AD
JESD-30 Code
O-MBCY-W3
Moisture Sensitivity Level
1
Number of Terminals
3
Operating Temperature-Min
-55 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Qualification Status
Not Qualified
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare 2N6661 with alternatives
Compare 2N6661-E3 with alternatives