2N6660 vs VP3203N3-GP013 feature comparison

2N6660 Microchip Technology Inc

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VP3203N3-GP013 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description TO-39, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.39.00.01 8541.21.00.95
Factory Lead Time 6 Weeks
Samacsys Manufacturer Microchip
Additional Feature HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 30 V
Drain Current-Max (ID) 0.41 A 0.65 A
Drain-source On Resistance-Max 3 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF 60 pF
JEDEC-95 Code TO-39 TO-92
JESD-30 Code O-MBCY-W3 O-PBCY-T3
JESD-609 Code e4
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 6.25 W 0.74 W
Power Dissipation-Max (Abs) 6.25 W 0.74 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Reference Standard TS 16949
Surface Mount NO NO
Terminal Finish NICKEL GOLD
Terminal Form WIRE THROUGH-HOLE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns
Base Number Matches 3 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 2N6660 with alternatives

Compare VP3203N3-GP013 with alternatives