2N6648 vs JAN2N6650 feature comparison

2N6648 New England Semiconductor

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JAN2N6650 New England Semiconductor

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 10 A 10 A
Collector-Emitter Voltage-Max 40 V 80 V
Configuration DARLINGTON SINGLE
DC Current Gain-Min (hFE) 1000 100
JEDEC-95 Code TO-66 TO-3
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type PNP NPN
Power Dissipation-Max (Abs) 27 W 100 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 20 MHz 20 MHz
VCEsat-Max 2 V
Base Number Matches 18 7
Package Description TO-3, 2 PIN
Case Connection COLLECTOR
Reference Standard MIL-19500/527B

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