2N6531-DR6259
vs
2N6531-6200
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
8 A
8 A
Collector-Base Capacitance-Max
200 pF
200 pF
Collector-Emitter Voltage-Max
100 V
100 V
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
100
100
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
65 W
65 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
3 V
3 V
Base Number Matches
2
2
Compare 2N6531-DR6259 with alternatives
Compare 2N6531-6200 with alternatives