2N6531-6226
vs
2N6531-6200
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
8 A
8 A
Collector-Base Capacitance-Max
200 pF
200 pF
Collector-Emitter Voltage-Max
100 V
100 V
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
100
100
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
65 W
65 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
3 V
3 V
Base Number Matches
2
2
Package Description
FLANGE MOUNT, R-PSFM-T3
Compare 2N6531-6226 with alternatives
Compare 2N6531-6200 with alternatives