2N6519BU
vs
2N6519
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Collector Current-Max (IC)
0.5 A
0.5 A
Collector-Emitter Voltage-Max
300 V
300 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
20
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-W3
JESD-609 Code
e3
Moisture Sensitivity Level
NOT APPLICABLE
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity/Channel Type
PNP
PNP
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
40 MHz
40 MHz
Turn-off Time-Max (toff)
3.5 ns
3.5 ns
Turn-on Time-Max (ton)
200 ns
200 ns
Base Number Matches
1
1
Package Description
CYLINDRICAL, O-PBCY-W3
ECCN Code
EAR99
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.625 W
Transistor Application
SWITCHING
Compare 2N6519BU with alternatives
Compare 2N6519 with alternatives