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2N6491-DR6269 vs 2N6491-DR6259 feature comparison

2N6491-DR6269 Harris Semiconductor

Buy Now Datasheet

2N6491-DR6259 Harris Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 15 A 15 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 5 5
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 75 W 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 3.5 V 3.5 V
Base Number Matches 2 2
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

Compare 2N6491-DR6269 with alternatives

Compare 2N6491-DR6259 with alternatives