2N6484
vs
SI3457CDV-T1-GE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SIPEX CORP
|
VISHAY SILICONIX
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
3 W
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Base Number Matches |
8
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TSOP
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G6
|
| Pin Count |
|
6
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
5.1 A
|
| Drain-source On Resistance-Max |
|
0.074 Ω
|
| Feedback Cap-Max (Crss) |
|
63 pF
|
| JEDEC-95 Code |
|
MO-193AA
|
| JESD-30 Code |
|
R-PDSO-G6
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
6
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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