2N6341
vs
2N6306
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
10 A
8 A
Collector-Emitter Voltage-Max
150 V
250 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
15
JEDEC-95 Code
TO-204
TO-3
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
200 W
125 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
40 MHz
5 MHz
Base Number Matches
24
23
Pbfree Code
No
Part Package Code
TO-3
Pin Count
2
Samacsys Manufacturer
Microsemi Corporation
Reference Standard
MIL-19500/498
Compare 2N6341 with alternatives
Compare 2N6306 with alternatives