2N6326
vs
2N1490
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
API TECHNOLOGIES CORP
|
NEW ENGLAND SEMICONDUCTOR
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
30 A
|
6 A
|
| Collector-Emitter Voltage-Max |
60 V
|
55 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
6
|
25
|
| JEDEC-95 Code |
TO-3
|
TO-204AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
114 W
|
75 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
40 MHz
|
1 MHz
|
| VCEsat-Max |
1.5 V
|
1 V
|
| Base Number Matches |
14
|
22
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.95
|
| JESD-609 Code |
|
e0
|
| Power Dissipation Ambient-Max |
|
75 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare 2N6326 with alternatives