We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

2N6308 vs 2N6308E3 feature comparison

2N6308 Silicon Transistor Corporation

Buy Now Datasheet

2N6308E3 Microsemi Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 8 A 8 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 12 12
JESD-609 Code e0
Number of Elements 1 1
Operating Temperature-Max 200 °C
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 125 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT) 5 MHz 5 MHz
Base Number Matches 27 1
Case Connection COLLECTOR
Collector-Emitter Voltage-Max 350 V
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

Compare 2N6308E3 with alternatives