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2N6299 vs JAN2N6298 feature comparison

2N6299 Silicon Transistor Corporation

Buy Now Datasheet

JAN2N6298 Silicon Transistor Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP SILICON TRANSISTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V 60 V
Configuration DARLINGTON DARLINGTON
DC Current Gain-Min (hFE) 750 750
JEDEC-95 Code TO-213 TO-213
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 75 W 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 4 MHz 4 MHz
Base Number Matches 4 1
Reference Standard MIL
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

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