We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

2N6299 vs 2N6299E3 feature comparison

2N6299 Microsemi Corporation

Buy Now Datasheet

2N6299E3 Microsemi Corporation

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code TO-66
Pin Count 2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Microsemi Corporation Microsemi Corporation
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON DARLINGTON
DC Current Gain-Min (hFE) 750 750
JEDEC-95 Code TO-66
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 75 W 64 W
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD OVER NICKEL
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz
Base Number Matches 5 1
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

Compare 2N6299 with alternatives

Compare 2N6299E3 with alternatives