2N6278
vs
2N6278E3
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
GENERAL TRANSISTOR CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
50 A
|
50 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
250 W
|
|
| Surface Mount |
NO
|
NO
|
| Transition Frequency-Nom (fT) |
30 MHz
|
|
| Base Number Matches |
16
|
1
|
| Package Description |
|
POST/STUD MOUNT, O-MUPM-X3
|
| Collector-Emitter Voltage-Max |
|
100 V
|
| JEDEC-95 Code |
|
TO-63
|
| JESD-30 Code |
|
O-MUPM-X3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
POST/STUD MOUNT
|
| Terminal Form |
|
UNSPECIFIED
|
| Terminal Position |
|
UPPER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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