2N60G-TN3-T vs 2N60LG-TA3-T feature comparison

2N60G-TN3-T Unisonic Technologies Co Ltd

Buy Now Datasheet

2N60LG-TA3-T Unisonic Technologies Co Ltd

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 2 A 2 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-220AB
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 44 W 54 W
Surface Mount YES NO
Base Number Matches 2 1
Rohs Code Yes
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Avalanche Energy Rating (Eas) 140 mJ
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 5 Ω
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 8 A
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 150 ns
Turn-on Time-Max (ton) 120 ns

Compare 2N60G-TN3-T with alternatives

Compare 2N60LG-TA3-T with alternatives